| PART |
Description |
Maker |
| Q62702-B403 BB620 |
From old datasheet system
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I)
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 硅变容二极管（对于Hyperband电视/录像机调谐器，屋宇署一
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
|
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
| BB304A Q62702-B118 SIEMENSAG-BB304A |
From old datasheet system
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 42 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Siemens Group
|
| HVU202B |
Diodes>Variable Capacitance
Variable Capacitance Diode for UHF/VHF tuner
|
Renesas Electronics Corporation
|
| KV1471K KV1471KA KV1471KTR |
VARIABLE CAPACITANCE DIODE UHF BAND, 35.6 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE
|
TOKO, Inc.
TOKO Inc
TOKO[TOKO, Inc]
|
| HVU306C |
Diodes>Variable Capacitance
VARIABLE CAPACITANCE DIODE FOR VHF TUNER
|
Renesas Electronics Corporation
|
| HVU17 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| BBY39 BBY39_1 BBY39/T1 |
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
UHF variable capacitance diode(UHF 可变电容双二极管)
UHF variable capacitance double diode
From old datasheet system
|
Philips Semiconductors
Philipss
NXP Semiconductors
|
| HVC362TRF-E HVC317BTRF HVU200ATRU HVC358BTRF-E |
15 V, SILICON, VARIABLE CAPACITANCE DIODE
30 V, SILICON, VARIABLE CAPACITANCE DIODE
VHF BAND, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
